One-dimensional approximation of Poisson equation for the description of multi-gate conducting channels of FETs and HEMTs

نویسندگان

  • Moon-Young Jeong
  • Yoon-Ha Jeong
  • Sung-Woo Hwang
  • P. Shiktorov
  • E. Starikov
  • V. Gružinskis
  • L. Varani
چکیده

One-dimensional approach for simulation of multi-gate FETs and HEMTS is proposed and validated by comparison with full two-dimensional simulations.

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تاریخ انتشار 2009